Download e-book for iPad: Semiconducting Silicides by Professor Dr Victor E. Borisenko (auth.)

By Professor Dr Victor E. Borisenko (auth.)

ISBN-10: 3642596495

ISBN-13: 9783642596490

ISBN-10: 3642640699

ISBN-13: 9783642640698

The ebook provides a accomplished presentation and research of homes and strategies of formation of semiconducting silicides
Fundamental digital, optical and shipping homes of the silicides amassed from contemporary courses can help the reader to choose for his or her program in new generations of solid-state devices
A complete presentation of thermodynamic and kinetic info is given together with their technical application
Information on corresponding thin-film or bulk crystal formation concepts is provided

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Additional resources for Semiconducting Silicides

Example text

8° to 99S, respectively. 11. 10. 11. 41], are all metallic. 1. RU2Sh. Semiconducting RU2Si3 has an orthorhombic structure (space group Pbcn) which is stable below 1000°C. 1 7]. The unit cell is rather large and complex. It contains 40 atoms in total (16 Ru and 24 Si atoms). 50 ~ @ 8§@@ r--, 000 @ ~@@Q3 o z o Si2 Fig. 6. Orthorhombic ~-FeSi2 unit cell projections onto xy, xz, and yz planes. 16] o ~ 0:l :::1 ~ I P- § 8 g ::l. o tx:l ... rn ~. <: 0'> I General Material Aspects 17 Both ruthenium and silicon atoms are grouped into three sets (Rul, Ru2, Ru3, Si I, Si2, Si3) of crystallographically inequivalent sites.

1] Silicide Mn3Si Mn sSi 3 MnSi MnSi L ?? 889x 10-3T-4226078T-2 Temperature range (K) 588-1241 743 -1332 792 -1418 610-1402 38 E. 28. Borisenko and Andrew B. 52 Mn,Si 25910 25829 25680 25488 25265 25016 24746 24603 23204 21712 23381 23302 22912 22484 21976 MnsSh 30242 30205 30207 30248 30330 30352 30616 Mn ll Si 19 30735 32 122 32213 32424 32613 32 782 32873 34199 34356 36695 37510 37572 37841 38124 38422 38609 39394 39581 39628 40316 40712 34395 35939 35979 36015 36076 36176 36317 36507 Mn,Si 25607 25513 25450 25422 25428 25468 25541 25589 25589 25689 25689 25735 25997 26296 26634 MnsSh MnllSil9 31438 31853 32266 32 675 33073 33457 33823 33613 32810 32 012 31204 30383 29543 28683 34102 34102 34141 34323 34487 34636 34720 34720 34729 27977 27977 27782 26790 25773 24732 24096 24096 23643 23529 23529 22442 34731 Re-Si system.

2) Except for direct reactions silicides may be produced by a chemical interaction of silicon or metal with already fonned silicide phases. In the most practical cases of solid state silicidation in thin film structures these reactions tend to enrich the precursor phase with silicon. An extended scheme of the transfonnations looks like Me+Si ~ Me3Si+Si Me2Si Me sSi 3 MeSi MeSh ~ Me2Si+Si MesSi3 MeSi MeSi 2 ~ Me sSi3+Si MeSi MeSi 2 ~ MeSi+Si MeSh ~ MeSh. 3) In a particular metal-silicon system some of the mentioned phases can be absent or substituted by others close in composition.

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Semiconducting Silicides by Professor Dr Victor E. Borisenko (auth.)


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